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HM5116160 Series HM5118160 Series
1048576-word x 16-bit Dynamic RAM
ADE-203-634C (Z) Rev. 3.0 Feb. 21, 1997
Description
The Hitachi HM5116160 Series, HM5118160 Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS technology for high performance and low power. The HM5116160 Series, HM5118160 Series offer Fast Page Mode as a high speed access mode. They have package variations of 42-pin plastic SOJ and 50-pin plastic TSOP II.
Features
* * * Single 5 V (10%) Access time: 50 ns/60 ns/70 ns (max) Power dissipation Active mode : 605 mW/550 mW/495 mW (max) (HM5116160 Series) 1100 mW/935 mW/825 mW (max) (HM5118160 Series) Standby mode : 11 mW (max) : 0.83 mW (max) (L-version) Fast page mode capability Refresh cycles 4096 refresh cycles : 64 ms (HM5116160 Series) : 128 ms (L-version) 1024 refresh cycles : 16 ms (HM5118160 Series) : 128 ms (L-version) 4 variations of refresh RAS-only refresh CAS-before-RAS refresh Hidden refresh Self refresh (L-version) 2CAS-byte control Battery backup operation (L-version)
* *
*
* *
HM5116160 Series, HM5118160 Series
Ordering Information
Type No. HM5116160J-5 HM5116160J-6 HM5116160J-7 HM5116160LJ-5 HM5116160LJ-6 HM5116160LJ-7 HM5118160J-5 HM5118160J-6 HM5118160J-7 HM5118160LJ-5 HM5118160LJ-6 HM5118160LJ-7 HM5116160TT-5 HM5116160TT-6 HM5116160TT-7 HM5116160LTT-5 HM5116160LTT-6 HM5116160LTT-7 HM5118160TT-5 HM5118160TT-6 HM5118160TT-7 HM5118160LTT-5 HM5118160LTT-6 HM5118160LTT-7 Access time 50 ns 60 ns 70 ns 50 ns 60 ns 70 ns 50 ns 60 ns 70 ns 50 ns 60 ns 70 ns 50 ns 60 ns 70 ns 50 ns 60 ns 70 ns 50 ns 60 ns 70 ns 50 ns 60 ns 70 ns 400-mil 50-pin plastic TSOP II (TTP-50/44DC) Package 400-mil 42-pin plastic SOJ (CP-42D)
2
HM5116160 Series, HM5118160 Series
Pin Arrangement
HM5116160J/LJ Series HM5116160TT/LTT Series VCC I/O0 I/O1 I/O2 I/O3 VCC I/O4 I/O5 I/O6 I/O7 NC 1 2 3 4 5 6 7 8 9 10 11 50 49 48 47 46 45 44 43 42 41 40 V SS I/O15 I/O14 I/O13 I/O12 V SS I/O11 I/O10 I/O9 I/O8 NC
VCC I/O0 I/O1 I/O2 I/O3 VCC I/O4 I/O5 I/O6 I/O7 NC NC WE RAS A11 A10 A0 A1 A2 A3 VCC
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 (Top view)
42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22
VSS I/O15 I/O14 I/O13 I/O12 VSS I/O11 I/O10 I/O9 I/O8 NC LCAS UCAS OE A9 A8 A7 A6 A5 A4 VSS
NC NC WE RAS A11 A10 A0 A1 A2 A3 VCC
15 16 17 18 19 20 21 22 23 24 25 (Top view)
36 35 34 33 32 31 30 29 28 27 26
NC LCAS UCAS OE A9 A8 A7 A6 A5 A4 VSS
Pin Description
Pin name A0 to A11 Function Address input -- Row/Refresh address A0 to A11 -- Column address A0 to A7 Data input/Data output Row address strobe Column address strobe Read/Write enable Output enable Power supply Ground No connection
I/O0 to I/O15 RAS UCAS, LCAS WE OE VCC VSS NC
3
HM5116160 Series, HM5118160 Series
Pin Arrangement
HM5118160J/LJ Series HM5118160TT/LTT Series VCC I/O0 I/O1 I/O2 I/O3 VCC I/O4 I/O5 I/O6 I/O7 NC 1 2 3 4 5 6 7 8 9 10 11 50 49 48 47 46 45 44 43 42 41 40 V SS I/O15 I/O14 I/O13 I/O12 V SS I/O11 I/O10 I/O9 I/O8 NC
VCC I/O0 I/O1 I/O2 I/O3 VCC I/O4 I/O5 I/O6 I/O7 NC NC WE RAS NC NC A0 A1 A2 A3 VCC
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 (Top view)
42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22
VSS I/O15 I/O14 I/O13 I/O12 VSS I/O11 I/O10 I/O9 I/O8 NC LCAS UCAS OE A9 A8 A7 A6 A5 A4 VSS
NC NC WE RAS NC NC A0 A1 A2 A3 VCC
15 16 17 18 19 20 21 22 23 24 25 (Top view)
36 35 34 33 32 31 30 29 28 27 26
NC LCAS UCAS OE A9 A8 A7 A6 A5 A4 VSS
Pin Description
Pin name A0 to A9 Function Address input -- Row/Refresh address A0 to A9 -- Column address A0 to A9 Data input/Data output Row address strobe Column address strobe Read/Write enable Output enable Power supply Ground No connection
I/O0 to I/O15 RAS UCAS, LCAS WE OE VCC VSS NC
4
HM5116160 Series, HM5118160 Series
Block Diagram (HM5116160 Series)
RAS UCAS LCAS WE OE
Timing and control
A0 A1 to A7
Row decoder
Column decoder Column * * * address buffers 1M array 1M array 1M array 1M array 1M array 1M array 1M array 1M array 1M array 1M array 1M array 1M array 1M array 1M array 1M array 1M array
* * * Row address A8 A9 A10 A11 buffers
I/O buffers
I/O0 to I/O15
Block Diagram(HM5118160 Series)
RAS UCAS LCAS WE OE
Timing and control
A0 A1 to A9 * * * Column address buffers
Column decoder 1M array 1M array 1M array 1M array 1M array 1M array 1M array 1M array 1M array 1M array 1M array 1M array 1M array 1M array 1M array 1M array
Row decoder
* * *
I/O buffers
Row address buffers
I/O0 to I/O15
5
HM5116160 Series, HM5118160 Series
Truth Table
RAS H L L L L L L L L L L L L L H to L H to L H to L L LCAS D L H L L H L L H L L H L H H L L L UCAS D H L L H L L H L L H L L H L H L L WE D H H H L* L* L* L* L* L*
2 2 2 2 2 2
OE D L L L D D D H H H L to H L to H L to H D D D D H
Output Open Valid Valid Valid Open Open Open Undefined Undefined Undefined Valid Valid Valid Open Open Open Open Open
Operation Standby Lower byte Read cycle Upper byte Word Lower byte Early write cycle Upper byte Word Lower byte Delayed write cycle Upper byte Word Lower byte Read-modify-write cycle Upper byte Word Word Word Word Word Read cycle (Output disabled) RAS-only refresh cycle CAS-before-RAS refresh cycle or Self refresh cycle (L-version)
H to L H to L H to L D D D D H
Notes: 1. H: High (inactive) L: Low (active) D: H or L 2. t WCS 0 ns Early write cycle t WCS < 0 ns Delayed write cycle 3. Mode is determined by the OR function of the UCAS and LCAS. (Mode is set by the earliest of UCAS and LCAS active edge and reset by the latest of UCAS and LCAS inactive edge.) However write OPERATION and output High-Z control are done independently by each UCAS, LCAS. ex. if RAS = H to L, UCAS = H, LCAS = L, then CAS-before-RAS refresh cycle is selected.
6
HM5116160 Series, HM5118160 Series
Absolute Maximum Ratings
Parameter Voltage on any pin relative to V SS Supply voltage relative to VSS Short circuit output current Power dissipation Operating temperature Storage temperature Symbol VT VCC Iout PT Topr Tstg Value -1.0 to +7.0 -1.0 to +7.0 50 1.0 0 to +70 -55 to +125 Unit V V mA W C C
Recommended DC Operating Conditions (Ta = 0 to +70C)
Parameter Supply voltage Input high voltage Input low voltage Symbol VCC VIH VIL Min 4.5 2.4 -1.0 Typ 5.0 -- -- Max 5.5 6.5 0.8 Unit V V V Notes 1, 2 1 1
Notes: 1. All voltage referred to VSS 2. The supply voltage with all VCC pins must be on the same level. The supply voltage with all VSS pins must be on the same level.
7
HM5116160 Series, HM5118160 Series
DC Characteristics (Ta = 0 to +70C, VCC = 5 V 10%, VSS = 0 V) (HM5116160 Series)
HM5116160 -5 Parameter Operating current* * Standby current
1, 2
-6
-7 Test conditions t RC = min TTL interface RAS, UCAS, LCAS = VIH Dout = High-Z CMOS interface RAS, UCAS, LCAS VCC - 0.2 V Dout = High-Z CMOS interface RAS, UCAS, LCAS VCC - 0.2 V Dout = High-Z t RC = min RAS = VIH UCAS, LCAS = VIL Dout = enable t RC = min t PC = min CMOS interface Dout = High-Z CBR refresh: tRC = 31.3 s t RAS 0.3 s CMOS interface RAS, UCAS, LCAS 0.2 V Dout = High-Z 0 V Vin 7 V 0 V Vout 7 V Dout = disable High Iout = -5 mA Low Iout = 4.2 mA
Symbol I CC1 I CC2
Min Max Min Max Min Max Unit -- -- 110 -- 2 -- 100 -- 2 -- 90 2 mA mA
--
1
--
1
--
1
mA
Standby current (L-version)
I CC2
--
150 --
150 --
150 A
RAS-only refresh current*2 Standby current*
1
I CC3 I CC5
-- --
110 -- 5 --
100 -- 5 --
90 5
mA mA
CAS-before-RAS refresh current Fast page mode current*1, * 3 Battery backup current* (Standby with CBR refresh) (L-version) Self refresh mode current (L-version) Input leakage current Output leakage current Output high voltage Output low voltage
4
I CC6 I CC7 I CC10
-- -- --
110 -- 105 -- 500 --
100 -- 95 --
90 85
mA mA
500 --
500 A
I CC11
--
300 --
300 --
300 A
I LI I LO VOH VOL
-10 10 -10 10 2.4 0
-10 10 -10 10
-10 10 -10 10 VCC 0.4
A A V V
VCC 2.4 0.4 0
VCC 2.4 0.4 0
Notes: 1. I CC depends on output load condition when the device is selected. ICC max is specified at the output open condition. 2. Address can be changed once or less while RAS = VIL. 3. Address can be changed once or less while UCAS and LCAS = VIH. 4. VIH VCC - 0.2 V, 0 V VIL 0.2 V.
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HM5116160 Series, HM5118160 Series
DC Characteristics (Ta = 0 to +70C, VCC = 5 V 10%, VSS = 0 V) (HM5118160 Series)
HM5118160 -5 Parameter Operating current* * Standby current
1, 2
-6
-7 Test conditions t RC = min TTL interface RAS, UCAS, LCAS = VIH Dout = High-Z CMOS interface RAS, UCAS, LCAS VCC - 0.2 V Dout = High-Z CMOS interface RAS, UCAS, LCAS VCC - 0.2 V Dout = High-Z t RC = min RAS = VIH UCAS, LCAS = VIL Dout = enable t RC = min t PC = min CMOS interface Dout = High-Z CBR refresh: tRC = 125 s t RAS 0.3 s CMOS interface RAS, UCAS, LCAS 0.2 V Dout = High-Z 0 V Vin 7 V 0 V Vout 7 V Dout = disable High Iout = -5 mA Low Iout = 4.2 mA
Symbol I CC1 I CC2
Min Max Min Max Min Max Unit -- -- 200 -- 2 -- 170 -- 2 -- 150 mA 2 mA
--
1
--
1
--
1
mA
Standby current (L-version)
I CC2
--
150 --
150 --
150 A
RAS-only refresh current*2 Standby current*
1
I CC3 I CC5
-- --
200 -- 5 --
170 -- 5 --
150 mA 5 mA
CAS-before-RAS refresh current Fast page mode current*1, * 3 Battery backup current* (Standby with CBR refresh) (L-version) Self refresh mode current (L-version) Input leakage current Output leakage current Output high voltage Output low voltage
4
I CC6 I CC7 I CC10
-- -- --
190 -- 185 -- 500 --
170 -- 165 -- 500 --
150 mA 145 mA 500 A
I CC11
--
300 --
300 --
300 A
I LI I LO VOH VOL
-10 10 -10 10 2.4 0
-10 10 -10 10
-10 10 -10 10 VCC 0.4
A A V V
VCC 2.4 0.4 0
VCC 2.4 0.4 0
Notes: 1. I CC depends on output load condition when the device is selected. ICC max is specified at the output open condition. 2. Address can be changed once or less while RAS = VIL. 3. Address can be changed once or less while UCAS and LCAS = VIH. 4. VIH VCC - 0.2 V, 0 V VIL 0.2 V.
9
HM5116160 Series, HM5118160 Series
Capacitance (Ta = 25C, VCC = 5 V 10%)
Parameter Input capacitance (Address) Input capacitance (Clocks) Output capacitance (Data-in, Data-out) Symbol CI1 CI2 CI/O Typ -- -- -- Max 5 7 7 Unit pF pF pF Notes 1 1 1, 2
Notes : 1. Capacitance measured with Boonton Meter or effective capacitance measuring method. 2. UCAS and LCAS = VIH to disable Dout.
10
HM5116160 Series, HM5118160 Series
AC Characteristics (Ta = 0 to +70C, VCC = 5 V 10%, VSS = 0 V) *1, *2, *18, *19, *20
Test Conditions * * * * Input rise and fall time: 5 ns Input timing reference levels: 0.8 V, 2.4 V Output timing reference levels: 0.4 V, 2.4 V Output load: 2 TTL gate + C L (100 pF) (Including scope and jig)
Read, Write, Read-Modify-Write and Refresh Cycles (Common parameters)
HM5116160/HM5118160 -5 Parameter Random read or write cycle time RAS precharge time CAS precharge time RAS pulse width CAS pulse width Row address setup time Row address hold time Column address setup time Column address hold time RAS to CAS delay time RAS to column address delay time RAS hold time CAS hold time CAS to RAS precharge time OE to Din delay time OE delay time from Din CAS delay time from Din Transition time (rise and fall) Symbol t RC t RP t CP t RAS t CAS t ASR t RAH t ASC t CAH t RCD t RAD t RSH t CSH t CRP t OED t DZO t DZC tT Min 90 30 7 50 13 0 7 0 7 17 12 13 50 5 13 0 0 3 Max -- -- -- -6 Min 110 40 10 Max -- -- -- -7 Min 130 50 10 Max -- -- -- Unit ns ns ns Notes
10000 60 10000 15 -- -- -- -- 37 25 -- -- -- -- -- -- 50 0 10 0 10 20 15 15 60 5 15 0 0 3
10000 70 10000 18 -- -- -- -- 45 30 -- -- -- -- -- -- 50 0 10 0 15 20 15 18 70 5 18 0 0 3
10000 ns 10000 ns -- -- -- -- 52 35 -- -- -- -- -- -- 50 ns ns ns ns ns ns ns ns ns ns ns ns ns 23 22 5 6 6 7 21 21 3 4
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HM5116160 Series, HM5118160 Series
Read Cycle
HM5116160/HM5118160 -5 Parameter Access time from RAS Access time from CAS Access time from address Access time from OE Read command setup time Read command hold time to CAS Read command hold time to RAS Column address to RAS lead time Column address to CAS lead time CAS to output in low-Z Output data hold time Output data hold time from OE Output buffer turn-off time Output buffer turn-off to OE CAS to Din delay time Symbol t RAC t CAC t AA t OEA t RCS t RCH t RRH t RAL t CAL t CLZ t OH t OHO t OFF t OEZ t CDD Min -- -- -- -- 0 0 0 25 25 0 3 3 -- -- 13 Max 50 13 25 13 -- -- -- -- -- -- -- -- 13 13 -- -6 Min -- -- -- -- 0 0 0 30 30 0 3 3 -- -- 15 Max 60 15 30 15 -- -- -- -- -- -- -- -- 15 15 -- -7 Min -- -- -- -- 0 0 0 35 35 0 3 3 -- -- 18 Max 70 18 35 18 -- -- -- -- -- -- -- -- 15 15 -- Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 13 13 5 12, 22 12 Notes 8, 9 9, 10, 17, 9, 11, 17, 9, 25
Write Cycle
HM5116160/HM5118160 -5 Parameter Write command setup time Write command hold time Write command pulse width Write command to RAS lead time Write command to CAS lead time Data-in setup time Data-in hold time Symbol t WCS t WCH t WP t RWL t CWL t DS t DH Min 0 7 7 13 13 0 7 Max -- -- -- -- -- -- -- -6 Min 0 10 10 15 15 0 10 Max -- -- -- -- -- -- -- -7 Min 0 15 10 18 18 0 15 Max -- -- -- -- -- -- -- Unit ns ns ns ns ns ns ns 23 15, 23 15, 23 Notes 14, 21 21
12
HM5116160 Series, HM5118160 Series
Read-Modify-Write Cycle
HM5116160/HM5118160 -5 Parameter Read-modify-write cycle time RAS to WE delay time CAS to WE delay time Column address to WE delay time OE hold time from WE Symbol t RWC t RWD t CWD t AWD t OEH Min 131 73 36 48 13 Max -- -- -- -- -- -6 Min 155 85 40 55 15 Max -- -- -- -- -- -7 Min 181 98 46 63 18 Max -- -- -- -- -- Unit ns ns ns ns ns 14 14 14 Notes
Refresh Cycle
HM5116160/HM5118160 -5 Parameter Symbol Min 5 7 5 Max -- -- -- CAS setup time (CBR refresh cycle) t CSR CAS hold time (CBR refresh cycle) t CHR RAS precharge to CAS hold time t RPC -6 Min 5 10 5 Max -- -- -- -7 Min 5 10 5 Max -- -- -- Unit ns ns ns Notes 21 22 21
Fast Page Mode Cycle
HM5116160/HM5118160 -5 Parameter Fast page mode cycle time Fast page mode RAS pulse width Access time from CAS precharge Symbol t PC t RASP t CPA Min Max 35 -- -- 30 -- -6 Min Max 40 -- -7 Min Max 45 -- Unit ns 16 9, 17, 22 Notes
100000 -- 30 -- -- 35
100000 -- 35 -- -- 40
100000 ns 40 -- ns ns
RAS hold time from CAS precharge t CPRH
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HM5116160 Series, HM5118160 Series
Fast Page Mode Read-Modify-Write Cycle
HM5116160/HM5118160 -5 Parameter Fast page mode read-modify-write cycle time Symbol t PRWC Min 76 53 Max -- -- -6 Min 85 60 Max -- -- -7 Min 96 68 Max -- -- Unit ns ns 14, 22 Notes
WE delay time from CAS precharge t CPW
Refresh (HM5116160 Series)
Parameter Refresh period Refresh period (L-version) Symbol t REF t REF Max 64 128 Unit ms ms Note 4096 cycles 4096 cycles
Refresh (HM5118160 Series)
Parameter Refresh period Refresh period (L-version) Symbol t REF t REF Max 16 128 Unit ms ms Note 1024 cycles 1024 cycles
Self Refresh Mode (L-version)
HM5116160L/HM5118160L -5 Parameter RAS pulse width (self refresh) RAS precharge time (self refresh) CAS hold time (self refresh) Symbol t RASS t RPS t CHS Min 100 90 -50 Max -- -- -- -6 Min 100 110 -50 Max -- -- -- -7 Min 100 130 -50 Max -- -- -- Unit s ns ns Notes 26, 27, 28, 29
14
HM5116160 Series, HM5118160 Series
Notes: 1. AC measurements assume t T = 5 ns. 2. An initial pause of 200 s is required after power up followed by a minimum of eight initialization cycles (any combination of cycles containing RAS-only refresh or CAS-before-RAS refresh). If the internal refresh counter is used, a minimum of eight CAS-before-RAS refresh cycles are required. 3. Operation with the tRCD (max) limit insures that tRAC (max) can be met, tRCD (max) is specified as a reference point only; if t RCD is greater than the specified tRCD (max) limit, then access time is controlled exclusively by tCAC . 4. Operation with the tRAD (max) limit insures that tRAC (max) can be met, tRAD (max) is specified as a reference point only; if t RAD is greater than the specified tRAD (max) limit, then access time is controlled exclusively by tAA . 5. Either t OED or tCDD must be satisfied. 6. Either t DZO or tDZC must be satisfied. 7. VIH (min) and VIL (max) are reference levels for measuring timing of input signals. Also, transition times are measured between V IH (min) and VIL (max). 8. Assumes that t RCD tRCD (max) and tRAD tRAD (max). If tRCD or tRAD is greater than the maximum recommended value shown in this table, t RAC exceeds the value shown. 9. Measured with a load circuit equivalent to 2 TTL loads and 100 pF. (VOH = 2.4 V, VOL = 0.4 V) 10. Assumes that t RCD tRCD (max) and tRCD + tCAC (max) tRAD + tAA (max). 11. Assumes that t RAD tRAD (max) and tRCD + tCAC (max) tRAD + tAA (max). 12. Either t RCH or tRRH must be satisfied for a read cycles. 13. t OFF (max) and tOEZ (max) define the time at which the outputs achieve the open circuit condition and are not referred to output voltage levels. 14. t WCS , t RWD, t CWD, t AWD and t CPW are not restrictive operating parameters. They are included in the data sheet as electrical characteristics only; if t WCS tWCS (min), the cycle is an early write cycle and the data out pin will remain open circuit (high impedance) throughout the entire cycle; if t RWD tRWD (min), tCWD tCWD (min), and tAWD tAWD (min), or tCWD tCWD (min), tAWD tAWD (min) and tCPW tCPW (min), the cycle is a read-modify-write and the data output will contain data read from the selected cell; if neither of the above sets of conditions is satisfied, the condition of the data out (at access time) is indeterminate. 15. These parameters are referred to UCAS and LCAS leading edge in early write cycles and to WE leading edge in delayed write or read-modify-write cycles. 16. t RASP defines RAS pulse width in fast page mode cycles. 17. Access time is determined by the longest among t AA , t CAC and t CPA. 18. In delayed write or read-modify-write cycles, OE must disable output buffer prior to applying data to the device. 19. When both UCAS and LCAS go low at the same time, all 16-bit data are written into the device. UCAS and LCAS cannot be staggered within the same write/read cycles. 20. All the V CC and VSS pins shall be supplied with the same voltages. 21. t ASC, tCAH , t RCS , t WCS , t WCH, t CSR and t RPC are determined by the earlier falling edge of UCAS or LCAS. 22. t CRP , t CHR, t RCH, t CPA and tCPW are determined by the later rising edge of UCAS or LCAS. 23. t CWL, t DH and tDS should be satisfied by both UCAS and LCAS. 24. t CP is determined by the time that both UCAS and LCAS are high. 25. When output buffers are enabled once, sustain the low impedance state until valid data is obtained. When output buffer is turned on and off within a very short time, generally it causes large VCC/VSS line noise, which causes to degrade VIH min/VIL max level. 26. Please do not use tRASS timing, 10 s tRASS 100 s. During this period, the device is in transition state from normal operation mode to self refresh mode. If t RASS 100 s, then RAS precharge time should use t RPS instead of tRP.
15
HM5116160 Series, HM5118160 Series
27. If you use distributed CBR refresh mode with 15.6 s interval in normal read/write cycle, CBR refresh should be executed within 15.6 s immediately after exiting from and before entering into self refresh mode. 28. If you use RAS only refresh or CBR burst refresh mode in normal read/write cycle, 4096 or 1024 cycles (4096 cycles: HM5116160 Series, 1024 cycles: HM5118160 Series) of distributed CBR refresh with 15.6 s interval should be executed within 64 or 16 ms (64 ms: HM5116160, 16 ms: HM5118160) immediately after exiting from and before entering into the self refresh mode. 29. Repetitive self refresh mode without refreshing all memory is not allowed. Once you exit from self fresh mode, all memory cells need to be refreshed before re-entering the self refresh mode again. 30. XXX: H or L (H: VIH (min) VIN VIH (max), L: VIL (min) VIN VIL (max)) ///////: Invalid Dout When the address, clock and input pins are not described on timing waveforms, their pins must be applied V IH or VIL.
16
HM5116160 Series, HM5118160 Series
Notes concerning 2CAS control
Please do not separate the UCAS/LCAS operation timing intentionally. UCAS/LCAS are allowed under the following conditions. 1. Each of the UCAS/LCAS should satisfy the timing specifications individually. 2. Different operation mode for upper/lower byte is not allowed; such as following. However skew between
RAS Delayed write UCAS Early write LCAS
WE
3. Closely separated upper/lower byte control is not allowed. However when the condition (t CP tU L) is satisfied, fast page mode can be performed.
RAS
UCAS
LCAS t UL
4. Byte control operation by remaining UCAS or LCAS high is guaranteed.
17
HM5116160 Series, HM5118160 Series
Timing Waveforms*30
Read Cycle
t RC t RAS t RP
RAS t CSH t RCD tT t RSH t CAS t CRP
UCAS LCAS
t ASR t RAD t ASC t RAL t CAL t CAH
t RAH
Address
Row
Column t RRH t RCS t RCH
WE
t DZC
t CDD
Din
High-Z
t DZO
t OEA
t OED
OE t OEZ t CAC t AA t RAC t CLZ Dout t OFF t OH Dout t OHO
18
HM5116160 Series, HM5118160 Series
Early Write Cycle
t RC t RAS t RP
RAS t CSH t RCD tT UCAS LCAS t RSH t CAS t CRP
t ASR
t RAH
t ASC
t CAH
Address
Row
Column
t WCS
t WCH
WE
t DS
t DH
Din
Din
Dout
High-Z* * t WCS t WCS (min)
19
HM5116160 Series, HM5118160 Series
Delayed Write Cycle*18
t RC t RAS
t RP
RAS t CSH t RCD tT UCAS LCAS t ASR t RAH t ASC t CAH t RSH t CAS t CRP
Address
Row
Column t CWL t RCS t RWL t WP
WE
t DZC
t DS
t DH
Din
High-Z
Din t OEH t OED
t DZO
OE t OEZ t CLZ High-Z*
Invalid Dout
Dout
* t OEH
t CWL
20
HM5116160 Series, HM5118160 Series
Read-Modify-Write Cycle*18
t RWC t RAS
t RP
RAS tT t RCD t CAS t CRP
UCAS LCAS t RAD t ASR t RAH t ASC t CAH
Address
Row t RCS
Column t CWD t AWD t RWD tCWL t RWL t WP
WE t DZC t DS Din
High-Z Din
t DH
t DZO
t OED t OEA
t OEH
OE t CAC t AA t RAC t OEZ t OHO
High-Z*
Dout t CLZ
Dout
* t OEH
t CWL
21
HM5116160 Series, HM5118160 Series
RAS-Only Refresh Cycle
t RC t RAS RAS tT t CRP UCAS LCAS t RPC t CRP t RP
t ASR t RAH Address Row t OFF Dout High-Z 22
HM5116160 Series, HM5118160 Series
CAS-Before-RAS Refresh Cycle
t RC t RP t RAS t RP t RAS
t RC t RP
RAS tT t RPC t CP UCAS LCAS t CSR t CHR t RPC t CP t CRP t CSR t CHR

Address t OFF Dout High-Z 23
HM5116160 Series, HM5118160 Series
Hidden Refresh Cycle
t RC t RAS
t RP
t RC t RAS
t RC t RP t RAS t RP
RAS tT t RSH t RCD
UCAS LCAS
t CHR
t CRP
t RAD tASR t RAH Address Row t ASC
t RAL t CAH
Column
t RCS WE
t RRH
t DZC High-Z Din
t CDD
t DZO t OEA OE t CAC t AA t RAC t CLZ Dout Dout
t OED
t OEZ t OHO t OFF t OH
24
HM5116160 Series, HM5118160 Series
Fast Page Mode Read Cycle
t RASP t CPRH t RP
RAS tT t CSH t RCD UCAS LCAS t RAL t RAD t ASR t RAH Address Row t CAL t ASC t CAH Column 1 t CAL t ASC t CAH Column 2 t CAL t ASC t CAH Column N t CAS t CP t PC t CAS t CP t RSH t CAS t CRP
t RCS t RCS WE t DZC t CDD Din t DZO High-Z t OED t DZC t CDD High-Z t DZO t OED t RCH t RCH
t RCS
t RRH t RCH
t DZC t CDD High-Z t DZO t OED
,
OE t RAC t AA t OH t CPA t AA t OH t CPA t AA t OH t OEA t OHO t OEA t OHO t OFF t OEZ t OHO t OEA t CAC t CLZ t OFF t CAC t OEZ t CLZ t CAC t CLZ t OFF t OEZ Dout Dout 1 Dout 2 Dout N 25
HM5116160 Series, HM5118160 Series
Fast Page Mode Early Write Cycle
t RASP t RP
RAS tT t CSH t RCD t CAS UCAS LCAS t PC t CP t CAS t CP t RSH t CAS t CRP
t ASR t RAH
t ASC t CAH
t ASC t CAH
t ASC t CAH
Address
Row
Column 1
Column 2
Column N
t WCS
t WCH
t WCS
t WCH
t WCS
t WCH
WE
t DS
t DH
t DS
t DH
t DS
t DH
Din
Din 1
Din 2
Din N
Dout
High-Z* * t WCS t WCS (min)
26
HM5116160 Series, HM5118160 Series
Fast Page Mode Delayed Write Cycle*18
t RASP t RP RAS tT t CSH t RCD
UCAS LCAS
t CP t PC t CAS t CAS
t CP t RSH t CAS
t CRP
t RAD t ASR t RAH Address Row t ASC t CAH Column 1 t CWL t RCS WE t WP t DZC t DS t DH Din t DZO t OED Din 1 t DZO t OED t WP t DZC t DS t DH Din 2 t DZO t OED t WP t DZC t DS t DH Din N t RCS t ASC t CAH Column 2 t CWL t RCS t ASC t CAH Column N t CWL t RWL

t OEH t OEH t OEH OE t CLZ t CLZ t CLZ t OEZ t OEZ t OEZ Dout High-Z*
Invalid Dout Invalid Dout Invalid Dout
* t OEH
t CWL
27
HM5116160 Series, HM5118160 Series
Fast Page Mode Read-Modify-Write Cycle*18
t RASP t RP RAS tT t CP t RCD
UCAS LCAS
t PRWC t CP t CAS t CAS
t RSH t CAS
t CRP
t RAD t ASR t ASC t RAH Row t CAH Column 1 t RWD t AWD t CWD WE t RCS t WP t DS t DZC t DH Din t DZO t OED t OEH OE Din 1 t DZO t OED t OEH t WP t DS t DZC t DH Din 2 t DZO t OED t OEH t WP t DS t DZC t DH Din N t RCS t CWL t ASC t CAH Column 2 t CPW t AWD t CWD t CWL t RCS t ASC t CAH Column N t CPW t AWD t CWD t RWL t CWL
Address
*
t OHO t OHO t OHO t AA t OEA t CAC t RAC t AA t CPA t OEA t CAC t AA t CPA t OEA t CAC t CLZ t OEZ t CLZ t OEZ t CLZ t OEZ
High-Z*
Dout
Dout 1
Dout 2
Dout N
* t OEH
t CWL
28
HM5116160 Series, HM5118160 Series
Self Refresh Cycle (L-version)* 26, 27, 28, 29
t RP
t RASS
t RPS
RAS tT t RPC t CP t CRP t CHS t CSR
+ * $
LCAS t OFF Dout High-Z 29
,
UCAS
HM5116160 Series, HM5118160 Series
Package Dimensions
HM5116160J/LJ Series HM5118160J/LJ Series (CP-42D)
Unit: mm
27.06 27.43 Max 42 22
10.16 0.13 0.74
3.50 0.26
1
21
11.18 0.13
1.30 Max
0.43 0.10 0.41 0.08
1.27
0.80 +0.25 -0.17
9.40 0.25
Hitachi Code JEDEC Code EIAJ Code Weight CP-42D MO-061-AG -- 1.75 g
0.10
2.50 0.12
30
HM5116160 Series, HM5118160 Series
HM5116160TT/LTT Series HM5118160TT/LTT Series (TTP-50/44DC)
Unit: mm
50
20.95 21.35 Max 40 36
26
11 15 1 0.27 0.07 0.25 0.05 1.15 Max 0.80 0.13 M 11.76 0.20 0.50 0.10 0.68 0 - 5 1.20 Max 0.145 0.05 0.125 0.04 3.20 0.13 0.05 25 0.80
0.10
10.16
Hitachi Code JEDEC Code EIAJ Code Weight
TTP-50/44DC MO-133DA -- 0.50 g
31
HM5116160 Series, HM5118160 Series
When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207
Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00
Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322
Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071
32
HM5116160 Series, HM5118160 Series
Revision Record
Rev. 1.0 2.0 Date Sep. 30, 1996 Dec. 5, 1996 Contents of Modification Initial issue Addition of HM5116160/HM5118160-5 Series DC Characteristics (HM5116160 Series) I CC7 max: 105/95 mA to 105/95/85 mA DC Characteristics (HM5118160 Series) I CC7 max: 170/150 mA to 185/165/145 mA AC Characteristics t RRH min: 0/0 ns to 5/5/5 ns t RPC min: 0/0 ns to 5/5/5 ns 3.0 Feb. 21, 1997 AC Characteristics t RRH min: 5/5/5 ns to 0/0/0 ns Drawn by Y. Kasama Y. Kasama Approved by M. Mishima M. Mishima
33

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